FDB5800 rev. c0 ?2012 fairchild semiconductor corporation motor load control FDB5800 n-channel logi c level powertrench ? mosfet www.fairchildsemi.com 1 FDB5800 n-channel logic level powertrench ? mosfet 60v, 80a, 7m ? features ? r ds(on) = 5.5m ? (typ.), v gs = 5v, i d = 80a ? high performance trench technology for extermely low rdson ? low gate charge ? high power and current handling capability ? rohs compliant applications ? ? dc-dc converters and off-line ups d g s to-263ab fdb series gate source drain (flange) december 2012
FDB5800 n-channel logi c level powertrench ? mosfet www.fairchildsemi.com 2 mosfet maximum ratings t c = 25c unless otherwise noted symbol parameter ratings units v dss drain to source voltage 60 v v gs gate to source voltage r 20 v i d drain current 80 a continuous (t c < 102 o c, v gs = 10v) continuous (t c < 90 o c, v gs = 5v) 80 a continuous (t amb = 25 o c, v gs = 10v, with r t ja = 43 o c/w) 14 a pulsed figure 4 a e as single pulse avalanche energy (note 1) 652 mj p d power dissipation 242 w derate above 25 o c 1.61 w/ o c t j , t stg operating and storage temperature -55 to 175 o c thermal characteristics r t jc thermal resistance junction to case to-263 0.62 o c/w r t ja thermal resistance junction to ambient to-263 ( note 2) 62.5 o c/w r t ja thermal resistance junction to ambient to-263, 1in 2 copper pad area 43 o c/w package marking and ordering information device marking device package reel size tape width quantity FDB5800 FDB5800 to-263ab 330mm 24mm 800 units electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = 250 p a, v gs = 0v 60 - - v i dss zero gate voltage drain current v ds = 48v - - 1 p a v gs = 0v t c = 150 o c - - 250 i gss gate to source leakage current v gs = r 20v - - r 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 1.0 - 2.5 v r ds(on) drain to source on resistance i d = 80a, v gs = 10v - 4.6 6.0 m : i d = 80a, v gs = 4.5v - 5.8 7.2 i d = 80a, v gs = 5v - 5.5 7.0 i d = 80a, v gs = 10v, t j = 175 o c - 10 12.6 dynamic characteristics c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 6625 - pf c oss output capacitance - 628 - pf c rss reverse transfer capacitance - 262 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 1.4 - : q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 30v i d = 80a i g = 1.0ma - 104 135 nc q g(5) total gate charge at 5v v gs = 0v to 5v - 55 72 nc q g(th) threshold gate charge v gs = 0v to 1v - 6.0 - nc q gs gate to source gate charge - 18.4 - nc q gs2 gate charge threshold to plateau - 12.5 - nc q gd gate to drain ?miller? charge - 20.1 - nc FDB5800 rev. c0
FDB5800 n-channel logi c level powertrench ? mosfet 3 switching characteristics (v gs = 5v) t on turn-on time v dd = 30v, i d = 80a v gs = 5v, r gs = 2 : - - 62.1 ns t d(on) turn-on delay time - 20.3 - ns t r rise time - 22.0 - ns t d(off) turn-off delay time - 27.1 - ns t f fall time - 12.1 - ns t off turn-off time - - 59.0 ns drain-source diode characteristics v sd source to drain diode voltage i sd = 80a - - 1.25 v i sd = 40a - - 1.0 v t rr reverse recovery time i sd = 60a, di sd /dt = 100a/ p s - - 44 ns q rr reverse recovered charge i sd = 60a, di sd /dt = 100a/ p s - - 57 nc notes: 1: starting t j = 25c, l = 1mh, i as = 36a, v dd = 54v, v gs = 10v. 2: pulse width = 100s. www.fairchildsemi.com FDB5800 rev. c0
FDB5800 n-channel logi c level powertrench ? mosfet 4 typical characteristics t c = 25c unless otherwise noted figure 1. t c , case temperature ( o c) power dissipation multiplier 0 0255075100 175 0.2 0.4 0.6 0.8 1.0 1.2 125 150 normalized power dissipation vs case temperature figure 2. 50 25 125 t c , case temperature (c) 100 150 75 40 60 100 0 i d , drain current (a) 120 80 20 140 vgs =10v current limited by package vgs = 5v r t jc = 0.62c/w maximum continuous drain current vs case temperature figure 3. 0.1 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 2 t, rectangular pulse duration (s) z t jc , normalized thermal impedance notes: duty factor: d = t 1 /t 2 peak t j = p dm x r t jc + t c p dm t 1 t 2 0.5 0.2 0.1 0.05 0.01 0.02 duty cycle - descending order single pulse normalized maximum transient thermal impedance figure 4. 100 1000 50 i dm , peak current (a) t, pulse width (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows: transconductance may limit current in this region v gs = 5v peak current capability www.fairchildsemi.com FDB5800 rev. c0
FDB5800 n-channel logi c level powertrench ? mosfet 5 figure 5. 1 10 100 1000 1 10 100 0.1 dc 100ms 10ms 1ms 100 p s v ds , drain to source voltage (v) i d , drain tcurrent (a) 10 p s operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c forward bias safe operating area note: refer to fairchild application notes an7514 and an7515 figure 6. t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] starting t j = 25 o c starting t j = 150 o c 500 100 10 1 0.01 0.1 1 10 100 1000 i as , avalanche current (a) t av , time in avalanche (ms) unclamped inductive switching capability figure 7. 02 5 v gs , gate to source voltage (v) 134 40 60 100 160 0 i d , drain tcurrent (a) 140 120 80 20 t a = 125 o c v ds = 6v t a = 25 o c t a = -55 o c pulse duration = 80 p s duty cycle = 0.5% max transfer characteristics figure 8. saturati on characteristics 01.02.0 v ds , drain to source voltage (v) 40 60 100 160 0 i d , drain tcurrent (a) 140 120 80 20 0.5 1.5 4.5v 3.0v 4.0v 3.5v 10v 5.0v pulse duration = 80 p s duty cycle = 0.5% max figure 9. 2 610 v gs , gate to source voltage (v) 48 0.006 0.008 0.012 0.002 r ds(on) , on-resistance(ohm) 0.016 0.014 0.010 0.004 i d = 20a t a = 175 o c t a = 25 o c pulse duration = 80 p s duty cycle = 0.5% max on-resistance variation vs gate-to- source voltage figure 10. - 80 40 160 t j , ambient temperature ( o c) 0 - 40 80 120 1.0 1.2 1.6 0.6 normalized drain to source on-resistance 2.0 1.8 1.4 0.8 200 2.2 i d = 80a v gs = 10v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on resistance vs junction temperature typical characteristics t c = 25c unless otherwise noted www.fairchildsemi.com FDB5800 rev. c0
FDB5800 n-channel logi c level powertrench ? mosfet 6 figure 11. - 80 40 160 t j , ambient temperature ( o c) 0 - 40 80 120 200 0.6 0.8 1.2 0.2 normalized gate threshold voltage 1.4 1.0 0.4 v gs = v ds i d = 250 p a normalized gate threshold voltage vs junction temperature figure 12. - 80 40 160 t j , ambient temperature ( o c) 0 - 40 80 120 200 1.0 1.1 normalized drain to source breakdown voltage 1.2 0.9 i d = 250 p a normalized drain to source breakdown voltage vs junction temperature figure 13. 0.1 100 v ds , drain to source voltage (v) 10 1000 10000 20000 100 capacitance (pf) 1 c oss f = 1mhz v gs = 0v c iss c rss capacitance vs drain to source voltage figure 14. 20 060100 q g , gate charge (nc) 40 80 4 6 10 0 v gs , gate- source voltage 8 2 waveforms in ascending order: id = 80a id = 1a vdd =30v gate charge wavefo rms for constant gate current typical characteristics t c = 25c unless otherwise noted www.fairchildsemi.com FDB5800 rev. c0
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FDB5800 n-channel logi c level powertrench ? mosfet
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